? semiconductor components industries, llc, 2016 july, 2016 ? rev. 8 1 publication order number: mmbt2907awt1/d mmbt2907awt1g, NSVMMBT2907AWT1G general purpose transistor pnp silicon these transistors are designed for general purpose amplifier applications. they are housed in the sc?70/sot?323 package which is designed for low power surface mount applications. features ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free, halogen free/bfr free and are rohs compliant maximum ratings rating symbol value unit collector ?emitter voltage v ceo ?60 vdc collector ?base voltage v cbo ?60 vdc emitter ?base voltage v ebo ?5.0 vdc collector current ? continuous i c ?600 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board (note 1) t a = 25 c p d 150 mw thermal resistance junction?to?ambient r ja 833 c/w junction and storage temperature t j , t stg ?55 to +150 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. fr?5 = 1.0 x 0.75 x 0.062 in. www. onsemi.com device package shipping ? ordering information marking diagram 1 2 3 sc ?70/sot? 323 case 419 ?04 style 3 collector 3 1 base 2 emitter mmbt2907awt1g sc?70 (pb?free) 3000 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specification s brochure, brd8011/d. 20 m 20 = specific device code m = date code = pb?free package 1 (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. NSVMMBT2907AWT1G sc?70 (pb?free) 3000 tape & reel
mmbt2907awt1g, NSVMMBT2907AWT1G www. onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ?emitter breakdown voltage (note 2) (i c = ?10 madc, i b = 0) v (br)ceo ?60 ? vdc collector ?base breakdown voltage (i c = ?10 madc, i e = 0) v (br)cbo ?60 ? vdc emitter ?base breakdown voltage (i e = ?10 adc, i c = 0) v (br)ebo ?5.0 ? vdc base cutoff current (v ce = ?30 vdc, v eb(off) = ?0.5 vdc) i bl ? ?50 nadc collector cutoff current (v ce = ?30 vdc, v eb(off) = ?0.5 vdc) i cex ? ?50 nadc on characteristics (3) dc current gain (note 2) (i c = ?0.1 madc, v ce = ?10 vdc) (i c = ?1.0 madc, v ce = ?10 vdc) (i c = ?10 madc, v ce = ?10 vdc) (i c = ?150 madc, v ce = ?10 vdc) (i c = ?500 madc, v ce = ?10 vdc) h fe 75 100 100 100 50 ? ? ? 340 ? ? collector ?emitter saturation voltage (note 2) (i c = ?150 madc, i b = ?15 madc) (i c = ?500 madc, i b = ?50 madc) v ce(sat) ? ? ?0.4 ?1.6 vdc base ?emitter saturation voltage (note 2) (i c = ?150 madc, i b = ?15 madc) (i c = ?500 madc, i b = ?50 madc) v be(sat) ? ? ?1.3 ?2.6 vdc small? signal characteristics current ?gain ? bandwidth product (i c = ?50 madc, v ce = 20 vdc, f = 100 mhz) f t 200 ? mhz output capacitance (v cb = ?10 vdc, i e = 0, f = 1.0 mhz) c obo ? 8.0 pf input capacitance (v eb = ?2.0 vdc, i c = 0, f = 1.0 mhz) c ibo ? 30 pf switching characteristics turn?on time (v cc = ?30 vdc, i c = ?150 madc, i b1 = ?15 madc) t on ? 45 ns delay time t d ? 10 rise time t r ? 40 storage time (v cc = ?6.0 vdc, i c = ?150 madc, i b1 = i b2 = 15 madc) t s ? 80 fall time t f ? 30 turn?off time t off ? 100 product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions. 2. pulse test: pulse width 300 s, duty cycle 2.0%. 0 0 -16 v 200 ns 50 1.0 k 200 -30 v to oscilloscope rise time 5.0 ns +15 v -6.0 v 1.0 k 37 50 1n916 1.0 k 200 ns -30 v to oscilloscope rise time 5.0 ns input z o = 50 prf = 150 pps rise time 2.0 ns p.w. < 200 ns input z o = 50 prf = 150 pps rise time 2.0 ns p.w. < 200 ns figure 1. delay and rise time test circuit figure 2. storage and fall time test circuit
mmbt2907awt1g, NSVMMBT2907AWT1G www. onsemi.com 3 typical characteristics figure 3. dc current gain i c , collector current (ma) 100 1000 10 1.0 t j = 150 c 25 c -55 c h fe , dc current gain 10 100 1000 v ce = 10 v figure 4. collector saturation region i b , base current (ma) -0.4 -0.6 -0.8 -1.0 -0.2 v , collector-emitter voltage (volts) 0 ce i c = -1.0 ma -0.005 -10 ma -0.01 -100 ma -500 ma -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 figure 5. turn?on time i c , collector current 300 -5.0 figure 6. turn?off time i c , collector current (ma) -5.0 t, time (ns) t, time (ns) 200 100 70 50 30 20 10 7.0 5.0 3.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 t r 2.0 v t d @ v be(off) = 0 v v cc = -30 v i c /i b = 10 t j = 25 c 500 300 100 70 50 30 20 10 7.0 5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 200 t f t s = t s - 1/8 t f v cc = -30 v i c /i b = 10 i b1 = i b2 t j = 25 c
mmbt2907awt1g, NSVMMBT2907AWT1G www. onsemi.com 4 typical small?signal characteristics noise figure v ce = 10 vdc, t a = 25 c figure 7. current?gain ? bandwidth product figure 8. capacitances i c , collector current (ma) reverse voltage (v) 100 0.1 0.01 1 10 1000 100 10 1 0.1 1 10 100 f t , current?gain ? bandwidth product (mhz) c, capacitance (pf) v ce = 2 v c obo 110 100 c ibo figure 9. collector emitter saturation voltage vs. collector current figure 10. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.01 0.1 1 1 0.1 0.01 0.001 0.2 0.3 0.5 0.7 0.8 1.0 1.1 v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v) i c /i b = 10 150 c ?55 c 25 c 0.4 0.6 0.9 i c /i b = 10 150 c ?55 c 25 c figure 11. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.2 0.3 0.5 0.6 0.7 0.9 1.1 1.2 v be(on) , base?emitter voltage (v) 0.4 0.8 1.0 v ce = 1 v 150 c ?55 c 25 c
mmbt2907awt1g, NSVMMBT2907AWT1G www. onsemi.com 5 package dimensions sc?70 (sot?323) case 419?04 issue n style 3: pin 1. base 2. emitter 3. collector a a2 d e1 b e e a1 c l 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 0.05 (0.002) 1.9 0.075 0.65 0.025 0.65 0.025 0.9 0.035 0.7 0.028 mm inches scale 10:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h e dim a min nom max min millimeters 0.80 0.90 1.00 0.032 inches a1 0.00 0.05 0.10 0.000 a2 0.70 ref b 0.30 0.35 0.40 0.012 c 0.10 0.18 0.25 0.004 d 1.80 2.10 2.20 0.071 e 1.15 1.24 1.35 0.045 e 1.20 1.30 1.40 0.047 0.035 0.040 0.002 0.004 0.014 0.016 0.007 0.010 0.083 0.087 0.049 0.053 0.051 0.055 nom max l 2.00 2.10 2.40 0.079 0.083 0.095 h e e1 0.65 bsc 0.38 0.028 ref 0.026 bsc 0.015 0.20 0.56 0.008 0.022 on semiconductor and are trademarks of semiconductor components industries, llc dba on semiconductor or its subsidiaries i n the united states and/or other countries. on semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property . a listing of on semiconductor?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf . on semiconductor reserves the right to make changes without further notice to any products herein. on semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does o n semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. buyer is responsible for its products and applications using on semiconductor products, including compliance with all laws, reg ulations and safety requirements or standards, regardless of any support or applications information provided by on semiconductor. ?typical? parameters which may be provided in on semiconductor data sheets and/or specifications can and do vary in dif ferent applications and actual performance may vary over time. all operating parameters, including ?typic als? must be validated for each customer application by customer?s technical experts. on semiconductor does not convey any license under its patent rights nor the right s of others. on semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any fda class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. should buyer purchase or use on semicondu ctor products for any such unintended or unauthorized application, buyer shall indemnify and hold on semiconductor and its officers, employees, subsidiaries, affiliates, and distrib utors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that on semiconductor was negligent regarding the design or manufacture of the part. on semiconductor is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 mmbt2907awt1/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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